EMD12T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

10

hFE Min :

68

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Collector Emitter Voltage (VCEO) :

300mV

Terminal Form :

Flat

Terminal Finish :

TIN/TIN COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Radiation Hardening :

No

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

ECCN Code :

EAR99

Number of Elements :

2

Resistor - Base (R1) :

47k Ω

Termination :

SMD/SMT

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Max Operating Temperature :

150°C

Power Dissipation :

150mW

Operating Supply Voltage :

50V

Number of Terminations :

6

Resistor - Emitter Base (R2) :

47k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Published :

2004

Collector Emitter Breakdown Voltage :

50V

Transition Frequency :

250MHz

Mount :

Surface Mount

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Max Output Current :

100mA

Polarity :

NPN, PNP

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

50V

Pbfree Code :

yes

HTS Code :

8541.21.00.75

Current Rating :

30mA

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

JESD-609 Code :

e3/e2

Factory Lead Time :

13 Weeks

Package / Case :

SOT-563, SOT-666

Frequency - Transition :

250MHz

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

150mW

Current - Collector Cutoff (Max) :

500nA

Number of Pins :

6

Pin Count :

6

Base Part Number :

MD12