EMB9T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

PNP

Resistor - Emitter Base (R2) :

47k Ω

Number of Elements :

2

ECCN Code :

EAR99

Frequency - Transition :

250MHz

Transistor Application :

SWITCHING

Radiation Hardening :

No

Mount :

Surface Mount

Operating Supply Voltage :

50V

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Continuous Collector Current :

-100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Voltage - Rated DC :

-50V

Resistor - Base (R1) :

10k Ω

Terminal Form :

Flat

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Published :

2004

Collector Emitter Voltage (VCEO) :

300mV

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

Current Rating :

-70mA

Transition Frequency :

250MHz

Power Dissipation :

150mW

JESD-609 Code :

e2

Time@Peak Reflow Temperature-Max (s) :

10

Package / Case :

SOT-563, SOT-666

hFE Min :

68

Transistor Type :

2 PNP - Pre-Biased (Dual)

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

150mW

Min Operating Temperature :

-55°C

Max Breakdown Voltage :

50V

Number of Pins :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Max Output Current :

100mA

Mounting Type :

Surface Mount

Terminal Finish :

TIN COPPER

Base Part Number :

MB9

Element Configuration :

Dual

HTS Code :

8541.21.00.75