EMB2T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Pin Count :

6

hFE Min :

68

Published :

2004

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

150mW

Voltage - Rated DC :

-50V

Peak Reflow Temperature (Cel) :

260

Min Operating Temperature :

-55°C

Transition Frequency :

250MHz

Number of Pins :

6

Terminal Form :

Flat

Pbfree Code :

yes

Number of Elements :

2

Radiation Hardening :

No

Frequency - Transition :

250MHz

Power Dissipation :

150mW

Resistor - Emitter Base (R2) :

47k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Base Part Number :

MB2

Package / Case :

SOT-563, SOT-666

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

300mV

Collector Emitter Breakdown Voltage :

50V

Max Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e2

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Number of Terminations :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Polarity :

PNP

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Copper (Sn/Cu)

Continuous Collector Current :

-100mA

Resistor - Base (R1) :

47k Ω

Time@Peak Reflow Temperature-Max (s) :

10

Element Configuration :

Dual

ECCN Code :

EAR99

HTS Code :

8541.21.00.75

Current - Collector Cutoff (Max) :

500nA

Factory Lead Time :

13 Weeks

Mount :

Surface Mount

Transistor Type :

2 PNP - Pre-Biased (Dual)

Lead Free :

Lead Free

Current Rating :

-30mA