DTC124ECAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Power - Max :

200mW

Operating Temperature (Max) :

150°C

JESD-30 Code :

R-PDSO-G3

Max Power Dissipation :

200mW

Transistor Application :

SWITCHING

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

300mV

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Number of Elements :

1

Resistor - Base (R1) :

22 k Ω

Transistor Element Material :

SILICON

Resistor - Emitter Base (R2) :

22 k Ω

Number of Terminations :

3

Max Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Transition Frequency :

250MHz

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Position :

Dual

VCEsat-Max :

0.3 V

JESD-609 Code :

e1

Collector Emitter Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

500nA

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Type :

Surface Mount

Mount :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Published :

2016

Terminal Form :

Gull wing

HTS Code :

8541.21.00.75

Qualification Status :

Not Qualified

Transistor Type :

NPN - Pre-Biased

Factory Lead Time :

13 Weeks

Frequency - Transition :

250MHz