DTC123JET1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Number of Terminations :

3

hFE Min :

80

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 0.047

Current Rating :

100mA

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

200mW

Factory Lead Time :

8 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

50V

Polarity :

NPN

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Contact Plating :

Tin

JESD-609 Code :

e3

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Height :

800μm

Collector Emitter Saturation Voltage :

250mV

Pbfree Code :

yes

Max Output Current :

100mA

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

6V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

DTC123

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Package / Case :

SC-75, SOT-416

Continuous Collector Current :

100mA

Published :

2006

Qualification Status :

Not Qualified

Halogen Free :

Halogen Free

Resistor - Base (R1) :

2.2 k Ω

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Operating Supply Voltage :

50V

Pin Count :

3

Length :

1.65mm

Voltage - Rated DC :

50V

Number of Pins :

3

Power Dissipation :

200mW

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Element Configuration :

Single

Width :

900μm

Resistor - Emitter Base (R2) :

47 k Ω

Collector Emitter Voltage (VCEO) :

50V

Transistor Type :

NPN - Pre-Biased