DTC123JET1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Operating Supply Voltage :

50V

Power Dissipation :

200mW

Base Part Number :

DTC123

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 0.047

Factory Lead Time :

8 Weeks

Terminal Form :

Gull wing

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Current Rating :

100mA

Package / Case :

SC-75, SOT-416

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Pin Count :

3

Terminal Position :

Dual

Transistor Type :

NPN - Pre-Biased

Voltage - Rated DC :

50V

Collector Emitter Voltage (VCEO) :

50V

Width :

900μm

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Surface Mount :

yes

Height :

800μm

Published :

2006

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Number of Terminations :

3

Current - Collector Cutoff (Max) :

500nA

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Max Breakdown Voltage :

50V

Max Power Dissipation :

200mW

Polarity :

NPN

Resistor - Base (R1) :

2.2 k Ω

Max Collector Current :

100mA

ECCN Code :

EAR99

Number of Pins :

3

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

6V

Length :

1.65mm

Max Output Current :

100mA

Resistor - Emitter Base (R2) :

47 k Ω

hFE Min :

80

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

250mV