DTC123JET1G
- Mfr.Part #
- DTC123JET1G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 50V 100MA SC75
- Stock
- 12,241
- In Stock :
- 12,241
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA 10V
- Number of Terminations :
- 3
- hFE Min :
- 80
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 0.047
- Current Rating :
- 100mA
- Current - Collector Cutoff (Max) :
- 500nA
- Max Power Dissipation :
- 200mW
- Factory Lead Time :
- 8 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 50V
- Polarity :
- NPN
- Max Operating Temperature :
- 150°C
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Min Operating Temperature :
- -55°C
- Height :
- 800μm
- Collector Emitter Saturation Voltage :
- 250mV
- Pbfree Code :
- yes
- Max Output Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- DTC123
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Package / Case :
- SC-75, SOT-416
- Continuous Collector Current :
- 100mA
- Published :
- 2006
- Qualification Status :
- Not Qualified
- Halogen Free :
- Halogen Free
- Resistor - Base (R1) :
- 2.2 k Ω
- Max Collector Current :
- 100mA
- Max Breakdown Voltage :
- 50V
- Operating Supply Voltage :
- 50V
- Pin Count :
- 3
- Length :
- 1.65mm
- Voltage - Rated DC :
- 50V
- Number of Pins :
- 3
- Power Dissipation :
- 200mW
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Element Configuration :
- Single
- Width :
- 900μm
- Resistor - Emitter Base (R2) :
- 47 k Ω
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Type :
- NPN - Pre-Biased
- Datasheets
- DTC123JET1G

DTC123JET1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
DTC123JET1G Description
The ON Semiconductor DTC123JET1G is designed to replace a single device and its external resistor bias network.
DTC123JET1G Features
-
Simplifies Circuit Design
-
Reduces Board Space
-
Reduces Component Count
-
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
DTC123JET1G Applications
-
Consumer Electronics
-
Portable Devices
-
Industrial
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