DTC115EUBTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Emitter-Collector Voltage (Max) :

50(V)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Collector Current-Max (IC) :

0.1 A

Output Voltage :

100 mV

Configuration :

Single

Mounting Type :

Surface Mount

Surface Mount :

yes

Transistor Type :

NPN - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 5mA, 5V

Transistor Application :

SWITCHING

Product Category :

Bipolar Transistors - Pre-Biased

Resistor - Emitter Base (R2) :

100 kOhms

Packaging :

Tape and Reel

Package Type :

UMTF

JESD-30 Code :

R-PDSO-F3

Power Dissipation :

0.2(W)

DC Current Gain :

82

Reach Compliance Code :

Compliant

Terminal Form :

Flat

Mounting Style :

SMD/SMT

Continuous Collector Current :

100 mA

Power - Max :

200 mW

Polarity/Channel Type :

NPN

Subcategory :

Transistors

Current - Collector Cutoff (Max) :

500nA

Transistor Element Material :

SILICON

Series :

-

Package Shape :

RECTANGULAR

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Polarity :

NPN

Type :

NPN

Collector-Emitter Voltage-Max :

50 V

Collector Current (DC) :

0.1(A)

Product Type :

BJTs - Bipolar Transistors - Pre-Biased

Typical Resistor Ratio :

1

Maximum Operating Temperature :

+ 150 C

Brand :

Rohm Semiconductor

Frequency - Transition :

250 MHz

Number of Terminals :

3

Package :

Digi-Reel?

Terminal Position :

Dual

Resistor - Base (R1) :

100 kOhms

Current - Collector (Ic) (Max) :

100 mA

Voltage - Collector Emitter Breakdown (Max) :

50 V

RoHS :

Details

Manufacturer :

Rohm Semiconductor

Product Status :

Active

Supplier Device Package :

UMT3F

DC Current Gain-Min (hFE) :

82

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1.0

Package / Case :

SC-85