DTC115ECAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Pin Count :

3

Number of Terminations :

3

Terminal Form :

Gull wing

Max Power Dissipation :

200mW

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Max Breakdown Voltage :

50V

Reach Compliance Code :

not_compliant

Collector Emitter Voltage (VCEO) :

300mV

HTS Code :

8541.21.00.75

Transition Frequency :

250MHz

Factory Lead Time :

7 Weeks

Number of Elements :

1

Package / Case :

TO-236-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Published :

2016

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

VCEsat-Max :

0.3 V

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-G3

Collector Emitter Breakdown Voltage :

50V

Terminal Position :

Dual

DC Current Gain-Min (hFE) :

82

Operating Temperature (Max) :

150°C

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Collector Current :

100mA