DTC114ECAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Element Material :

SILICON

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Published :

1998

Element Configuration :

Single

Max Output Current :

100mA

Pin Count :

3

Transition Frequency :

250MHz

Number of Pins :

3

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1.0

Number of Elements :

1

Continuous Collector Current :

100mA

Max Power Dissipation :

200mW

Collector Emitter Breakdown Voltage :

50V

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

10 k Ω

Number of Terminations :

3

Resistor - Emitter Base (R2) :

10 k Ω

hFE Min :

30

Terminal Position :

Dual

Polarity :

NPN

Transistor Application :

SWITCHING

Mount :

Surface Mount

Factory Lead Time :

13 Weeks

Frequency - Transition :

250MHz

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

DTC114

Max Operating Temperature :

150°C

JESD-609 Code :

e1

Max Collector Current :

50mA

ECCN Code :

EAR99

Transistor Type :

NPN - Pre-Biased

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

HTS Code :

8541.21.00.75

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Form :

Gull wing

Power Dissipation :

200mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Operating Supply Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

300mV

Current - Collector Cutoff (Max) :

500nA

Pbfree Code :

yes