DTC013ZEBTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Published :

2016

Max Collector Current :

100mA

Max Power Dissipation :

150mW

Max Breakdown Voltage :

50V

Terminal Position :

Dual

Terminal Form :

Flat

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 5mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN RESISTOR

JESD-30 Code :

R-PDSO-F3

Resistor - Emitter Base (R2) :

10 k Ω

Power - Max :

150mW

Reach Compliance Code :

not_compliant

Number of Elements :

1

Frequency - Transition :

250MHz

Transistor Type :

NPN - Pre-Biased

Packaging :

Cut Tape (CT)

Collector Emitter Voltage (VCEO) :

150mV

Polarity/Channel Type :

NPN

Mount :

Surface Mount

Resistor - Base (R1) :

1 k Ω

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transition Frequency :

250MHz

Current - Collector Cutoff (Max) :

500nA

Factory Lead Time :

13 Weeks

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 10

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 10V

Package / Case :

SC-89, SOT-490

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V