DTA123JEBTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21

Max Power Dissipation :

150mW

Published :

2013

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Transistor Type :

PNP - Pre-Biased

Number of Terminations :

3

Max Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

47 k Ω

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

10

Factory Lead Time :

10 Weeks

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Terminal Position :

Dual

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA

Pin Count :

3

Frequency - Transition :

250MHz

Number of Elements :

1

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Resistor - Base (R1) :

2.2 k Ω

Element Configuration :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transition Frequency :

250MHz

Mounting Type :

Surface Mount

Package / Case :

SC-89, SOT-490

Number of Pins :

3

Base Part Number :

DTA123

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

300mV

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount

Polarity/Channel Type :

PNP

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)