DTA123EET1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Polarity :

PNP

JESD-609 Code :

e3

Surface Mount :

yes

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Base Part Number :

DTA123

Max Operating Temperature :

150°C

Published :

2010

Max Power Dissipation :

200mW

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

250mV

Resistor - Base (R1) :

2.2 k Ω

Pin Count :

3

Number of Pins :

3

hFE Min :

8

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Element Configuration :

Single

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Current Rating :

-100mA

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

2.2 k Ω

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

RoHS Status :

RoHS Compliant

Transistor Type :

PNP - Pre-Biased

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-50V

Power Dissipation :

200mW

Min Operating Temperature :

-55°C

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Transistor Application :

SWITCHING

Continuous Collector Current :

100mA

Package / Case :

SC-75, SOT-416