DTA123ECA

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Packaging :

Tape and Reel (TR)

Factory Lead Time :

13 Weeks

Max Breakdown Voltage :

50V

Max Power Dissipation :

200mW

Published :

2016

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 20mA 5V

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP - Pre-Biased

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Power - Max :

200mW

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Number of Elements :

1

HTS Code :

8541.21.00.75

Max Collector Current :

100mA

Qualification Status :

Not Qualified

Frequency - Transition :

250MHz

Transition Frequency :

250MHz

Collector Emitter Voltage (VCEO) :

300mV

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

2.2 k Ω

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Terminations :

3

Transistor Element Material :

SILICON

Pin Count :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

500nA

JESD-30 Code :

R-PDSO-G3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

VCEsat-Max :

0.3 V

Transistor Application :

SWITCHING

Resistor - Base (R1) :

2.2 k Ω

Operating Temperature (Max) :

150°C