DTA115TM3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Pins :

3

Min Operating Temperature :

-55°C

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Max Power Dissipation :

260mW

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

PNP - Pre-Biased

Max Collector Current :

100mA

Additional Feature :

BUILT IN BIAS RESISTOR

Pin Count :

3

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Number of Terminations :

3

Lead Free :

Lead Free

hFE Min :

160

Terminal Position :

Dual

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

250mV

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Published :

2009

Max Operating Temperature :

150°C

Resistor - Base (R1) :

100 k Ω

Number of Elements :

1

Terminal Form :

Flat

Polarity :

PNP

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Package / Case :

SOT-723

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

500nA

Halogen Free :

Halogen Free