DTA115EET1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Power Dissipation :

200mW

Resistor - Emitter Base (R2) :

100 k Ω

Pin Count :

3

Terminal Position :

Dual

Transistor Type :

PNP - Pre-Biased

Peak Reflow Temperature (Cel) :

260

Halogen Free :

Halogen Free

Polarity :

PNP

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Transistor Application :

SWITCHING

Contact Plating :

Tin

ECCN Code :

EAR99

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Current Rating :

-100mA

Element Configuration :

Single

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

hFE Min :

80

Base Part Number :

DTA115

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

200mW

Radiation Hardening :

No

Voltage - Rated DC :

-50V

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

50V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Continuous Collector Current :

100mA

Resistor - Base (R1) :

100 k Ω

Max Collector Current :

100mA

Factory Lead Time :

2 Weeks

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Published :

2006

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

Number of Terminations :

3

Lead Free :

Lead Free

Package / Case :

SC-75, SOT-416

Current - Collector Cutoff (Max) :

500nA

Number of Elements :

1