DTA114EM3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Width :

850μm

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Resistor - Base (R1) :

10 k Ω

Lead Free :

Lead Free

Continuous Collector Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

50V

Min Operating Temperature :

-55°C

Resistor - Emitter Base (R2) :

10 k Ω

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

Max Power Dissipation :

260mW

Polarity :

PNP

Power Dissipation :

260mW

Base Part Number :

DTA114

hFE Min :

35

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Mounting Type :

Surface Mount

Voltage - Rated DC :

-50V

Package / Case :

SOT-723

Factory Lead Time :

2 Weeks

Transistor Type :

PNP - Pre-Biased

Number of Pins :

3

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current Rating :

-100mA

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Pbfree Code :

yes

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

6V

Max Collector Current :

100mA

Length :

1.25mm

Collector Emitter Saturation Voltage :

250mV

Transistor Application :

SWITCHING

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Surface Mount :

yes

Terminal Form :

Flat

Current - Collector Cutoff (Max) :

500nA

Published :

2009

Height :

550μm

Max Operating Temperature :

150°C