DTA114EET1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

hFE Min :

35

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

50V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Transistor Type :

PNP - Pre-Biased

JESD-609 Code :

e3

Polarity :

PNP

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Operating Supply Voltage :

50V

Pin Count :

3

Height :

900μm

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Max Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Current - Collector Cutoff (Max) :

500nA

Voltage - Rated DC :

-50V

Continuous Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Output Current :

100mA

Length :

1.65mm

Contact Plating :

Tin

Current Rating :

70mA

Package / Case :

SC-75, SOT-416

Number of Elements :

1

Published :

2005

Max Power Dissipation :

200mW

Terminal Position :

Dual

Mounting Type :

Surface Mount

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Element Configuration :

Single

Number of Terminations :

3

Output Voltage :

300mV

Power Dissipation :

200mW

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

250mV

Width :

900μm

Resistor - Base (R1) :

10 k Ω

Number of Pins :

3

Resistor - Emitter Base (R2) :

10 k Ω

Factory Lead Time :

8 Weeks

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Surface Mount :

yes

Base Part Number :

DTA114

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Terminal Form :

Gull wing

Radiation Hardening :

No

Lead Free :

Lead Free