DTA114EET1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

hFE Min :

35

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Output Voltage :

300mV

Published :

2005

Terminal Position :

Dual

Resistor - Emitter Base (R2) :

10 k Ω

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500nA

Continuous Collector Current :

100mA

Pbfree Code :

yes

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

50V

Polarity :

PNP

Number of Terminations :

3

Transistor Type :

PNP - Pre-Biased

Resistor - Base (R1) :

10 k Ω

Mounting Type :

Surface Mount

Current Rating :

70mA

ECCN Code :

EAR99

Package / Case :

SC-75, SOT-416

Max Collector Current :

100mA

Collector Emitter Saturation Voltage :

250mV

Lead Free :

Lead Free

Width :

900μm

Voltage - Rated DC :

-50V

Base Part Number :

DTA114

JESD-609 Code :

e3

Terminal Form :

Gull wing

Height :

900μm

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Operating Supply Voltage :

50V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Length :

1.65mm

Element Configuration :

Single

REACH SVHC :

No SVHC

Max Output Current :

100mA

Contact Plating :

Tin

Max Power Dissipation :

200mW

Power Dissipation :

200mW

Pin Count :

3

Collector Emitter Voltage (VCEO) :

50V

Halogen Free :

Halogen Free