DSA2002S0L
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- Mfr.Part #
- DSA2002S0L
- Manufacturer
- Panasonic
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.5A MINI3
- Stock
- 31,279
- In Stock ：
- 31,279
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Base Part Number :
- DSA2002
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 120
- Max Breakdown Voltage :
- 50V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 50V
- Max Frequency :
- 130MHz
- Max Power Dissipation :
- 200mW
- Gain Bandwidth Product :
- 130MHz
- Collector Emitter Saturation Voltage :
- -600mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Factory Lead Time :
- 10 Weeks
- Element Configuration :
- Single
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 160MHz
- Collector Base Voltage (VCBO) :
- -60V
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 600mV
- Width :
- 1.5mm
- Length :
- 2.9mm
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 150mA 10V
- Continuous Collector Current :
- -500mA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Height :
- 1.1mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2003
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Terminations :
- 3
- HTS Code :
- 8541.21.00.75
- Datasheets
- DSA2002S0L
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSA2002S0L Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 170 @ 150mA 10V DC current gain.As it features a collector emitter saturation voltage of -600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -500mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.There is a transition frequency of 160MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 500mA volts.
DSA2002S0L Features
the DC current gain for this device is 170 @ 150mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
a transition frequency of 160MHz
DSA2002S0L Applications
There are a lot of Panasonic Electronic Components
DSA2002S0L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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