DSA2002R0L
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- Mfr.Part #
- DSA2002R0L
- Manufacturer
- Panasonic
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.5A MINI3
- Stock
- 13,940
- In Stock ：
- 13,940
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 160MHz
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- HTS Code :
- 8541.21.00.75
- RoHS Status :
- RoHS Compliant
- Collector Base Voltage (VCBO) :
- -60V
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 50V
- Max Frequency :
- 130MHz
- Factory Lead Time :
- 10 Weeks
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 150mA 10V
- Height :
- 1.1mm
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- -600mV
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Transistor Application :
- AMPLIFIER
- Continuous Collector Current :
- -500mA
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- -5V
- Max Breakdown Voltage :
- 50V
- Packaging :
- Tape and Reel (TR)
- Width :
- 1.5mm
- Gain Bandwidth Product :
- 130MHz
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 600mV
- Number of Terminations :
- 3
- hFE Min :
- 120
- Max Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 500mA
- Base Part Number :
- DSA2002
- Length :
- 2.9mm
- Datasheets
- DSA2002R0L
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSA2002R0L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 30mA, 300mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 500mA volts.
DSA2002R0L Features
the DC current gain for this device is 120 @ 150mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
a transition frequency of 160MHz
DSA2002R0L Applications
There are a lot of Panasonic Electronic Components
DSA2002R0L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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