DRA5143T0L

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

10 Weeks

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Transistor Element Material :

SILICON

Mount :

Surface Mount

Terminal Form :

Flat

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

Max Operating Temperature :

150°C

JESD-30 Code :

R-PDSO-F3

Packaging :

Tape and Reel (TR)

Polarity :

PNP

Reach Compliance Code :

Unknown

Collector Emitter Voltage (VCEO) :

-50V

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Resistor - Base (R1) :

4.7 k Ω

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

-100mA

Height :

800μm

Element Configuration :

Single

Base Part Number :

DRA5143

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

-250mV

Max Power Dissipation :

150mW

Transistor Type :

PNP - Pre-Biased

Number of Elements :

1

Current - Collector Cutoff (Max) :

500nA

Published :

2010

Number of Pins :

85

Length :

2mm

Width :

1.25mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Package / Case :

SC-85