DNLS160V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

60V

Gain Bandwidth Product :

270MHz

Height :

600μm

Current - Collector Cutoff (Max) :

100nA

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

3.005049mg

Collector Base Voltage (VCBO) :

80V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Published :

2008

Max Collector Current :

1A

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

5V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Pin Count :

6

Factory Lead Time :

19 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 1mA 5V

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100mA, 1A

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Mount :

Surface Mount

Terminal Position :

Dual

Frequency :

270MHz

Transition Frequency :

270MHz

Terminal Form :

Flat

Power Dissipation :

300mW

Width :

1.2mm

Transistor Type :

NPN

Frequency - Transition :

150MHz

Element Configuration :

Single

Collector Emitter Saturation Voltage :

250mV

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

60V

Collector Emitter Voltage (VCEO) :

60V

Max Power Dissipation :

300mW

REACH SVHC :

No SVHC

Additional Feature :

High Reliability

Package / Case :

SOT-563, SOT-666

RoHS Status :

ROHS3 Compliant

Length :

1.6mm

Transistor Element Material :

SILICON