DNLS350E-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

60V

Terminal Position :

Dual

Gain Bandwidth Product :

100MHz

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

290mV @ 200mA, 2A

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Weight :

7.994566mg

Terminal Finish :

Matte Tin (Sn)

Emitter Base Voltage (VEBO) :

6V

Factory Lead Time :

19 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Collector Current :

3A

Current - Collector Cutoff (Max) :

100nA ICBO

Base Part Number :

DNLS350

Transistor Element Material :

SILICON

Transistor Type :

NPN

Number of Elements :

1

Radiation Hardening :

No

Published :

2008

Max Breakdown Voltage :

50V

Package / Case :

TO-261-4, TO-261AA

Collector Emitter Saturation Voltage :

290mV

Length :

6.5mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Transistor Application :

SWITCHING

Height :

1.6mm

Pin Count :

4

Case Connection :

COLLECTOR

Width :

3.5mm

ECCN Code :

EAR99

Number of Terminations :

4

Collector Emitter Voltage (VCEO) :

50V

JESD-609 Code :

e3

Element Configuration :

Single

Pbfree Code :

yes

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Max Collector Current :

3A

Transition Frequency :

100MHz

Max Power Dissipation :

1W

Number of Pins :

4

REACH SVHC :

No SVHC