DNLS320E-13
- Mfr.Part #
- DNLS320E-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 3A SOT223-3
- Stock
- 2,908
- In Stock :
- 2,908
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 150MHz
- ECCN Code :
- EAR99
- Published :
- 2008
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-261-4, TO-261AA
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Height :
- 1.6mm
- Transition Frequency :
- 150MHz
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 20mA, 3A
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Number of Pins :
- 4
- Max Power Dissipation :
- 1W
- Transistor Application :
- SWITCHING
- Base Part Number :
- DNLS320
- Manufacturer Package Identifier :
- DNLS320E-13
- Collector Emitter Breakdown Voltage :
- 20V
- Length :
- 6.5mm
- Width :
- 3.5mm
- Number of Terminations :
- 4
- Transistor Type :
- NPN
- Weight :
- 7.994566mg
- Terminal Finish :
- Matte Tin (Sn)
- Max Breakdown Voltage :
- 20V
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 450mV
- Collector Base Voltage (VCBO) :
- 20V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 2A 2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 20V
- Frequency :
- 150MHz
- Max Collector Current :
- 3A
- Pin Count :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 15 Weeks
- Datasheets
- DNLS320E-13

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
DNLS320E-13 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 400 @ 2A 2V.The collector emitter saturation voltage is 450mV, which allows for maximum design flexibility.When VCE saturation is 450mV @ 20mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
DNLS320E-13 Features
the DC current gain for this device is 400 @ 2A 2V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 450mV @ 20mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DNLS320E-13 Applications
There are a lot of Diodes Incorporated
DNLS320E-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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