DMN33D9LV-7A

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Standard

Packaging :

Cut Tape

Number of Elements :

2

Package Shape :

RECTANGULAR

Series :

-

Manufacturer :

Diodes Incorporated

Supplier Device Package :

SOT-563

Package / Case :

SOT-563, SOT-666

Current - Continuous Drain (Id) @ 25°C :

350mA (Ta)

Brand :

Diodes Incorporated

Subcategory :

MOSFETs

Product Type :

MOSFET

Package :

Tape and Reel (TR)

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

30 V

Surface Mount :

yes

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current Id :

350mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Unknown

Transistor Polarity :

N Channel

Transistor Type :

2 N-Channel

FET Type :

2 N-Channel (Dual)

Power - Max :

430mW (Ta)

Vgs(th) (Max) @ Id :

1.4V @ 100μA

Terminal Form :

Flat

Factory Lead Time :

16 Weeks

Mounting Style :

SMD/SMT

Drain-source On Resistance-Max :

0.0024 Ω

Mounting Type :

Surface Mount

Qualification :

-

JESD-30 Code :

R-PDSO-F6

Product Category :

MOSFET

MSL :

MSL 1 - Unlimited

Feedback Cap-Max (Crss) :

8 pF

Power Dissipation-Max (Abs) :

0.43 W

Rise Time :

2.6 ns

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

1.23nC @ 10V

Transistor Element Material :

SILICON

Configuration :

Dual

Operating Temperature :

-55°C ~ 150°C (TJ)

Terminal Position :

Dual

Channel Mode :

Enhancement

Technology :

Si

Input Capacitance (Ciss) (Max) @ Vds :

48pF @ 5V

Product Status :

Active

Operating Mode :

ENHANCEMENT MODE

Channel Type :

N Channel

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

2.4Ohm @ 250mA, 10V

Number of Channels :

2 Channel

Number of Terminals :

6