DMN3033LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Max Power Dissipation :

2W

Continuous Drain Current (ID) :

6.9A

Length :

5.3mm

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Transistor Element Material :

SILICON

Turn On Delay Time :

11 ns

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Pbfree Code :

yes

Weight :

850.995985mg

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Published :

2011

Turn-Off Delay Time :

63 ns

Input Capacitance (Ciss) (Max) @ Vds :

725pF @ 15V

FET Feature :

Logic Level Gate

Height :

1.5mm

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

High Reliability

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

20m Ω @ 6.9A, 10V

Factory Lead Time :

15 Weeks

Number of Pins :

8

Rise Time :

7ns

Lead Free :

Lead Free

Width :

4.1mm

FET Type :

2 N-Channel (Dual)

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

30A

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

2W

Resistance :

22mOhm

JESD-609 Code :

e3

Pin Count :

8

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Fall Time (Typ) :

30 ns

Drain to Source Voltage (Vdss) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR