DMN3032LFDB-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Pbfree Code :

yes

DS Breakdown Voltage-Min :

30V

Terminal Form :

NO LEAD

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

High Reliability

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

1W

Continuous Drain Current (ID) :

6.2A

Published :

2015

FET Feature :

Standard

JESD-609 Code :

e4

Reference Standard :

AEC-Q101

Package / Case :

6-UDFN Exposed Pad

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Number of Elements :

2

Vgs(th) (Max) @ Id :

2V @ 250μA

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 15V

JESD-30 Code :

S-PDSO-N6

Drain-source On Resistance-Max :

0.03Ohm

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

10.6nC @ 10V

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.8A, 10V

Number of Terminations :

6

Factory Lead Time :

23 Weeks

Transistor Element Material :

SILICON

Power - Max :

1W

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)