DMN3024LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Power Dissipation :

2W

FET Type :

2 N-Channel (Dual)

Continuous Drain Current (ID) :

7.2A

Current - Continuous Drain (Id) @ 25°C :

6.8A

Max Power Dissipation :

1.8W

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

608pF @ 15V

Fall Time (Typ) :

8 ns

Terminal Form :

Gull wing

Turn On Delay Time :

2.9 ns

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

8

Mount :

Surface Mount

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Pbfree Code :

yes

Weight :

73.992255mg

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

24m Ω @ 7A, 10V

Base Part Number :

DMN3024LSD

Terminal Finish :

Matte Tin (Sn)

FET Feature :

Logic Level Gate

Number of Pins :

8

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

5.7A

Rise Time :

3.3ns

Factory Lead Time :

17 Weeks

Packaging :

Digi-Reel®

Turn-Off Delay Time :

16 ns

Gate Charge (Qg) (Max) @ Vgs :

12.9nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2009