DMHC10H170SFJ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

2.1W

Continuous Drain Current (ID) :

2.3A

Number of Channels :

4

Rds On (Max) @ Id, Vgs :

160m Ω @ 5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Height :

850μm

Package / Case :

12-VDFN Exposed Pad

Terminal Finish :

Matte Tin (Sn)

Max Junction Temperature (Tj) :

150°C

Power Dissipation :

2.1W

Gate Charge (Qg) (Max) @ Vgs :

9.7nC @ 10V

Published :

2012

Factory Lead Time :

18 Weeks

FET Feature :

Standard

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1167pF @ 25V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

2.9A 2.3A

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

100V

Mount :

Surface Mount

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

2 N and 2 P-Channel (H-Bridge)

RoHS Status :

ROHS3 Compliant