DMGD7N45SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

256pF @ 25V

Transistor Element Material :

SILICON

FET Feature :

Standard

JESD-30 Code :

R-PDSO-G8

Number of Terminations :

8

Pulsed Drain Current-Max (IDM) :

2.2A

Rds On (Max) @ Id, Vgs :

4 Ω @ 400mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

450V

FET Type :

2 N-Channel (Dual)

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Number of Elements :

2

DS Breakdown Voltage-Min :

450V

Additional Feature :

High Reliability

Factory Lead Time :

17 Weeks

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Drain-source On Resistance-Max :

4Ohm

Max Power Dissipation :

1.64W

Series :

Automotive, AEC-Q101

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Continuous Drain Current (ID) :

500mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

6.9nC @ 10V

Avalanche Energy Rating (Eas) :

56 mJ

Mount :

Surface Mount

Published :

2014

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain Current-Max (Abs) (ID) :

0.5A