DMG9N65CT

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

122 ns

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

9A

Turn On Delay Time :

39 ns

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Fall Time (Typ) :

28 ns

Transistor Application :

SWITCHING

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Weight :

2.299997g

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Rds On (Max) @ Id, Vgs :

1.3 Ω @ 4.5A, 10V

Pbfree Code :

No

Additional Feature :

High Reliability

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2310pF @ 25V

Published :

2015

JESD-609 Code :

e3

Package / Case :

TO-220-3

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

8 Weeks

Rise Time :

29ns

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

650V

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

9A

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

165W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC