DMC561010R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

NPN

Transistor Element Material :

SILICON

Height :

600μm

REACH SVHC :

Unknown

Number of Elements :

2

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Base Part Number :

DMC56101

Number of Terminations :

5

Published :

2000

Resistor - Emitter Base (R2) :

10k Ω

Collector Emitter Saturation Voltage :

250mV

Max Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500nA

Factory Lead Time :

10 Weeks

RoHS Status :

RoHS Compliant

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

10k Ω

Continuous Collector Current :

100mA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

JESD-609 Code :

e6

Number of Pins :

5

Transistor Type :

2 NPN - Pre-Biased (Dual)

Packaging :

Tape and Reel (TR)

Package / Case :

5-SMD, Flat Leads

Element Configuration :

Dual

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

150mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Width :

1.25mm

Length :

2mm

ECCN Code :

EAR99