DMC4050SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.06Ohm

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1790.8pF @ 20V

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

40V

Base Part Number :

DMC4050

Published :

2011

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Continuous Drain Current (ID) :

5.8A

Number of Elements :

2

Length :

4.95mm

Max Power Dissipation :

2.14W

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

40V

Power Dissipation :

2.14W

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Pin Count :

8

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Height :

1.5mm

Mount :

Surface Mount

Number of Channels :

2

Rise Time :

15.14ns

REACH SVHC :

No SVHC

Power - Max :

1.8W

Gate Charge (Qg) (Max) @ Vgs :

37.56nC @ 10V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Additional Feature :

High Reliability

FET Type :

N and P-Channel

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Width :

3.95mm

Fall Time (Typ) :

5.27 ns

Factory Lead Time :

17 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Weight :

73.992255mg

Current - Continuous Drain (Id) @ 25°C :

5.3A

Terminal Finish :

Matte Tin (Sn) - annealed

Radiation Hardening :

No

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

8.08 ns

Turn-Off Delay Time :

24.29 ns

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

45m Ω @ 3A, 10V