DMC1229UFDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Package / Case :

6-UDFN Exposed Pad

Number of Pins :

6

Rise Time :

11.5ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Radiation Hardening :

No

Fall Time (Typ) :

26.4 ns

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

914pF @ 6V

Contact Plating :

Gold

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Turn-Off Delay Time :

27.8 ns

Max Power Dissipation :

1.4W

FET Type :

N and P-Channel

Mount :

Surface Mount

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

5.6A 3.8A

Drain to Source Voltage (Vdss) :

12V

Height :

555μm

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

3.8A

Terminal Position :

Dual

Length :

2.08mm

Turn On Delay Time :

5.7 ns

Time@Peak Reflow Temperature-Max (s) :

30

Width :

2.075mm

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

8V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Series :

Automotive, AEC-Q101

Factory Lead Time :

15 Weeks

Rds On (Max) @ Id, Vgs :

29m Ω @ 5A, 4.5V

Peak Reflow Temperature (Cel) :

260

Number of Channels :

2

Number of Elements :

2

JESD-609 Code :

e4

Additional Feature :

High Reliability

Gate Charge (Qg) (Max) @ Vgs :

19.6nC @ 8V

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Element Material :

SILICON