CAB006A12GM3

Manufacturer :

Wolfspeed

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS :

N

Power - Max :

10mW (Tc)

Manufacturer :

Wolfspeed

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

Package / Case :

Module

Technology :

SiC

Brand :

Wolfspeed

Packaging :

Tray

Number of Channels :

2 Channel

Configuration :

H-Bridge

Height :

12.25 mm

Width :

42.5 mm

Rds On (Max) @ Id, Vgs :

6.9mOhm @ 200A, 15V

FET Feature :

Silicon Carbide (SiC)

Subcategory :

Discrete Semiconductor Modules

Rise Time :

-

Product :

Power MOSFET Modules

Length :

51 mm

Operating Supply Voltage :

-

Operating Temperature Range :

- 40 C to + 150 C

Input Capacitance (Ciss) (Max) @ Vds :

20400pF @ 800V

Maximum Operating Temperature :

+ 150 C

Mounting Style :

Screw Mounts

Minimum Operating Temperature :

- 40 C

Operating Temperature :

-40°C ~ 150°C (TJ)

Transistor Polarity :

N-Channel

Product Type :

Discrete Semiconductor Modules

Output Current :

-

Product Category :

Discrete Semiconductor Modules

Mounting Type :

Chassis Mount

Current - Continuous Drain (Id) @ 25°C :

200A (Tj)

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

708nC @ 15V

Vgs(th) (Max) @ Id :

3.6V @ 69mA

Series :

WolfPACK

Type :

Half Bridge Module

Supplier Device Package :

-

Vf - Forward Voltage :

4.9 V

Product Status :

Active