BUZ111S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Power Dissipation (Max) :

300W (Tc)

Avalanche Energy Rating (Eas) :

700 mJ

JESD-609 Code :

e0

Additional Feature :

AVALANCHE RATED

Qualification Status :

COMMERCIAL

FET Feature :

-

Supplier Device Package :

PG-TO220-3-1

Number of Terminals :

3

Terminal Finish :

TIN LEAD

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

4500 pF @ 25 V

Rds On (Max) @ Id, Vgs :

8mOhm @ 80A, 10V

Drain to Source Voltage (Vdss) :

55 V

Vgs (Max) :

±20V

Manufacturer :

Rochester Electronics LLC

Operating Temperature :

-55°C ~ 175°C (TJ)

Surface Mount :

No

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Series :

SIPMOS®

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Technology :

MOSFET (Metal Oxide)

Pulsed Drain Current-Max (IDM) :

320 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

185 nC @ 10 V

Mounting Type :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package / Case :

TO-220-3

Package :

Bulk

Pbfree Code :

No

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

55 V

Drain-source On Resistance-Max :

0.008 Ω

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 240µA

Package Shape :

RECTANGULAR

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Product Status :

Active

Terminal Form :

THROUGH-HOLE