BUZ111S
- Mfr.Part #
- BUZ111S
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 2,202
- In Stock :
- 2,202
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Series :
- SIPMOS®
- Qualification Status :
- COMMERCIAL
- Number of Terminals :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500 pF @ 25 V
- Power Dissipation (Max) :
- 300W (Tc)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package :
- Bulk
- Additional Feature :
- AVALANCHE RATED
- Manufacturer :
- Rochester Electronics LLC
- Pbfree Code :
- No
- Drain-source On Resistance-Max :
- 0.008 Ω
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Product Status :
- Active
- Terminal Form :
- THROUGH-HOLE
- Supplier Device Package :
- PG-TO220-3-1
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3
- Pulsed Drain Current-Max (IDM) :
- 320 A
- JEDEC-95 Code :
- TO-220AB
- Current - Continuous Drain (Id) @ 25°C :
- 80A (Tc)
- FET Feature :
- -
- Drain to Source Voltage (Vdss) :
- 55 V
- JESD-609 Code :
- e0
- Terminal Finish :
- TIN LEAD
- Rds On (Max) @ Id, Vgs :
- 8mOhm @ 80A, 10V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 240µA
- Reach Compliance Code :
- Unknown
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 185 nC @ 10 V
- Vgs (Max) :
- ±20V
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 55 V
- Technology :
- MOSFET (Metal Oxide)
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Surface Mount :
- No
- Datasheets
- BUZ111S

MOSFET (Metal Oxide) N-Channel 8mOhm @ 80A, 10V ±20V 4500 pF @ 25 V 185 nC @ 10 V 55 V TO-220-3
BUZ111S Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 700 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4500 pF @ 25 V.There is a peak drain current of 320 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 55 V, it should remain above the 55 V level.The transistor must receive a 55 V drain to source voltage (Vdss) in order to function.
BUZ111S Features
the avalanche energy rating (Eas) is 700 mJ
based on its rated peak drain current 320 A.
a 55 V drain to source voltage (Vdss)
BUZ111S Applications
There are a lot of Infineon
BUZ111S applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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