BUZ111S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Manufacturer :

Rochester Electronics LLC

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

55 V

Gate Charge (Qg) (Max) @ Vgs :

185 nC @ 10 V

Reach Compliance Code :

Unknown

Terminal Finish :

TIN LEAD

Power Dissipation (Max) :

300W (Tc)

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C ~ 175°C (TJ)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

3

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

Product Status :

Active

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Technology :

MOSFET (Metal Oxide)

Series :

SIPMOS®

Package / Case :

TO-220-3

JESD-609 Code :

e0

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

55 V

Pbfree Code :

No

Supplier Device Package :

PG-TO220-3-1

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.008 Ω

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

700 mJ

Rds On (Max) @ Id, Vgs :

8mOhm @ 80A, 10V

Pulsed Drain Current-Max (IDM) :

320 A

FET Feature :

-

Surface Mount :

No

Package :

Bulk

Terminal Form :

THROUGH-HOLE

Input Capacitance (Ciss) (Max) @ Vds :

4500 pF @ 25 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Number of Terminals :

3

Vgs(th) (Max) @ Id :

4V @ 240µA