BUZ101L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Continuous Drain Current Id :

29

Package :

Bulk

Channel Type :

N

Drain to Source Voltage (Vdss) :

50 V

Continuous Drain Current (ID) :

29 A

DS Breakdown Voltage-Min :

50 V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

70 mJ

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Series :

-

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Surface Mount :

No

Reach Compliance Code :

Unknown

Polarity/Channel Type :

N-Channel

Manufacturer :

Rochester Electronics LLC

Pulsed Drain Current-Max (IDM) :

116 A

RoHS :

Non-Compliant

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SINGLE WITH BUILT-IN DIODE

Product Status :

Active

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.06 Ω

Package Shape :

RECTANGULAR

Terminal Form :

THROUGH-HOLE

Number of Terminals :

3

Terminal Finish :

NOT SPECIFIED