BUZ100S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

15mOhm @ 55A, 10V

FET Type :

N-Channel

Terminal Finish :

TIN LEAD

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Number of Elements :

1

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

77A (Tc)

Surface Mount :

No

DS Breakdown Voltage-Min :

55 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

308 A

FET Feature :

-

Terminal Form :

THROUGH-HOLE

Supplier Device Package :

PG-TO220-3-1

Technology :

MOSFET (Metal Oxide)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Pbfree Code :

No

Number of Terminals :

3

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On, Min Rds On) :

10V

Drain-source On Resistance-Max :

0.015 Ω

Qualification Status :

COMMERCIAL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

TO-220-3

Manufacturer :

Rochester Electronics LLC

Power Dissipation (Max) :

170W (Tc)

Additional Feature :

AVALANCHE RATED

Continuous Drain Current Id :

77

Vgs (Max) :

±20V

Series :

SIPMOS®

Avalanche Energy Rating (Eas) :

380 mJ

Input Capacitance (Ciss) (Max) @ Vds :

2375 pF @ 25 V

Channel Type :

N

Package :

Bulk

Polarity/Channel Type :

N-Channel

Pin Count :

3

Terminal Position :

Single

Product Status :

Active

Drain to Source Voltage (Vdss) :

55 V

Package Shape :

RECTANGULAR

Vgs(th) (Max) @ Id :

4V @ 130µA

Operating Temperature :

-55°C ~ 175°C (TJ)

Gate Charge (Qg) (Max) @ Vgs :

100 nC @ 10 V

Configuration :

SINGLE WITH BUILT-IN DIODE