BUZ102SL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Package :

Bulk

Reach Compliance Code :

Unknown

JESD-609 Code :

e0

FET Feature :

-

Product Status :

Active

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.024 Ω

Technology :

MOSFET (Metal Oxide)

Number of Terminals :

3

FET Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

Pbfree Code :

No

Power Dissipation (Max) :

120W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

188 A

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Surface Mount :

No

Terminal Finish :

TIN LEAD

Current - Continuous Drain (Id) @ 25°C :

47A (Tc)

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

18mOhm @ 33A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C ~ 175°C (TJ)

Gate Charge (Qg) (Max) @ Vgs :

90 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1730 pF @ 25 V

Vgs (Max) :

±14V

Series :

SIPMOS®

Vgs(th) (Max) @ Id :

2V @ 90µA

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

55 V

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

245 mJ

Pin Count :

3

Transistor Application :

SWITCHING

Supplier Device Package :

TO-220AB

Manufacturer :

Rochester Electronics LLC

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

55 V

Terminal Form :

THROUGH-HOLE