BUL743
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- Mfr.Part #
- BUL743
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 500V 12A TO220
- Stock
- 19,836
- In Stock ：
- 19,836
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2.5A, 10A
- Base Part Number :
- BUL743
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 250μA
- hFE Min :
- 24
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-220-3
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 500V
- JESD-30 Code :
- R-PSFM-T3
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 150mV
- Power Dissipation :
- 100W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- JEDEC-95 Code :
- TO-220AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 15V
- Max Power Dissipation :
- 100W
- Collector Emitter Voltage (VCEO) :
- 500V
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 24 @ 2A 3V
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 8 Weeks
- Max Collector Current :
- 12A
- Datasheets
- BUL743
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL743 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 24 @ 2A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 2.5A, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 15V.During maximum operation, collector current can be as low as 12A volts.
BUL743 Features
the DC current gain for this device is 24 @ 2A 3V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 1.5V @ 2.5A, 10A
the emitter base voltage is kept at 15V
BUL743 Applications
There are a lot of STMicroelectronics
BUL743 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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