BUL741
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- Mfr.Part #
- BUL741
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 2.5A TO220
- Stock
- 4,466
- In Stock ：
- 4,466
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JEDEC-95 Code :
- TO-220AB
- Max Power Dissipation :
- 60W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 450mA 3V
- Polarity/Channel Type :
- NPN
- hFE Min :
- 48
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 400V
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 2A
- Transistor Application :
- SWITCHING
- Base Part Number :
- BUL741
- Qualification Status :
- Not Qualified
- Collector Emitter Voltage (VCEO) :
- 400V
- Mounting Type :
- Through Hole
- Max Collector Current :
- 2.5A
- Packaging :
- Tube
- Power - Max :
- 60W
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 250μA
- Reach Compliance Code :
- not_compliant
- Emitter Base Voltage (VEBO) :
- 15V
- Datasheets
- BUL741
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL741 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 450mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 600mA, 2A.The emitter base voltage can be kept at 15V for high efficiency.Single BJT transistor is possible to have a collector current as low as 2.5A volts at Single BJT transistors maximum.
BUL741 Features
the DC current gain for this device is 25 @ 450mA 3V
the vce saturation(Max) is 1.5V @ 600mA, 2A
the emitter base voltage is kept at 15V
BUL741 Applications
There are a lot of STMicroelectronics
BUL741 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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