BUL742C
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- Mfr.Part #
- BUL742C
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO220
- Stock
- 2,526
- In Stock ：
- 2,526
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 3.5A
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 800mA 3V
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 70W
- Emitter Base Voltage (VEBO) :
- 15V
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Pin Count :
- 3
- Max Collector Current :
- 4A
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 250μA
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 600mV
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 70W
- Base Part Number :
- BUL742
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 48
- Collector Emitter Voltage (VCEO) :
- 400V
- Collector Emitter Breakdown Voltage :
- 400V
- Current Rating :
- 4A
- Mount :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 1.05kV
- Datasheets
- BUL742C
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL742C Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 800mA 3V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 1A, 3.5A.If the emitter base voltage is kept at 15V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.Collector current can be as low as 4A volts at its maximum.
BUL742C Features
the DC current gain for this device is 25 @ 800mA 3V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 15V
the current rating of this device is 4A
BUL742C Applications
There are a lot of STMicroelectronics
BUL742C applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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