BUK9K12-60EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

FET Feature :

Logic Level Gate

JESD-30 Code :

R-PDSO-G6

Number of Terminations :

6

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

24.5nC @ 5V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Max Power Dissipation :

68W

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Continuous Drain Current (ID) :

35A

Avalanche Energy Rating (Eas) :

118 mJ

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.1V @ 1mA

RoHS Status :

ROHS3 Compliant

Power - Max :

68W

Pulsed Drain Current-Max (IDM) :

204A

Rds On (Max) @ Id, Vgs :

10.7m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3470pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Published :

2013

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Package / Case :

SOT-1205, 8-LFPAK56

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Reference Standard :

AEC-Q101; IEC-60134

Pin Count :

8

DS Breakdown Voltage-Min :

60V

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0115Ohm

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount