BTS7904BATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G5

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.2V @ 40μA

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 25V

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

40A

Drain Current-Max (Abs) (ID) :

40A

DS Breakdown Voltage-Min :

55V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

160A

Series :

OptiMOS™

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

11.7m Ω @ 20A, 10V

Terminal Position :

Single

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

55V 30V

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

121nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2008

Drain-source On Resistance-Max :

0.0202Ohm

Power - Max :

69W 96W

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Number of Terminations :

5

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

200 mJ

Terminal Form :

Gull wing