BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- ANBON SEMICONDUCTOR (INT'L) LIMITED
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- P-CHANNEL ENHANCEMENT MODE MOSFE
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- ANBON SEMICONDUCTOR (INT'L) LIMITED
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Dual Supply Voltage :
- -50V
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Operating Temperature :
- 150°C
- Voltage :
- 50V
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Drain to Source Breakdown Voltage :
- -50V
- Continuous Drain Current (ID) :
- 130mA
- Element Configuration :
- Single
- Current Rating :
- -130mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Length :
- 2.92mm
- Rds On Max :
- 10 Ω
- Fall Time (Typ) :
- 6.3 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- FET Type :
- P-Channel
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Turn On Delay Time :
- 2.5 ns
- Width :
- 3.05mm
- Input Capacitance :
- 73pF
- REACH SVHC :
- No SVHC
- Published :
- 2013
- Voltage - Rated DC :
- -50V
- Factory Lead Time :
- 8 Weeks
- Drain to Source Resistance :
- 10Ohm
- Nominal Vgs :
- -1.7 V
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 360mW
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 360mW Ta
- Rise Time :
- 6.3ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 10 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Threshold Voltage :
- -1.7V
- Operating Temperature :
- -55°C~150°C TJ
- Termination :
- SMD/SMT
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Supplier Device Package :
- SOT-23-3
- Current :
- 13A
- Mount :
- Surface Mount
- Resistance :
- 10Ohm
- Min Operating Temperature :
- -55°C
- Height :
- 930μm
- Drain to Source Voltage (Vdss) :
- 50V
- Datasheets
- BSS84
P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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