BSS192PH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Feedback Cap-Max (Crss) :

8 pF

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

SIPMOS™

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

190mA Ta

Power Dissipation-Max :

1W Ta

JESD-30 Code :

R-PDSO-F3

FET Type :

P-Channel

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.19A

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

104pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-243AA

HTS Code :

8541.29.00.95

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Surface Mount :

yes

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2002

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

2V @ 130µA

DS Breakdown Voltage-Min :

250V

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

250V

Rds On (Max) @ Id, Vgs :

12 Ω @ 190mA, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE