BSS192,135

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

90pF @ 25V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

200mA

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Element Configuration :

Single

Contact Plating :

Tin

Number of Elements :

1

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Published :

2014

HTS Code :

8541.21.00.75

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Max Dual Supply Voltage :

-240V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

0.2A

Package / Case :

TO-243AA

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

12 Ω @ 200mA, 10V

Transistor Application :

SWITCHING

Power Dissipation-Max :

560mW Ta 12.5W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Case Connection :

DRAIN

Number of Pins :

3

Vgs (Max) :

±20V

FET Type :

P-Channel

Number of Terminations :

3

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1W

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Surface Mount :

yes

Feedback Cap-Max (Crss) :

15 pF

Drain to Source Breakdown Voltage :

240V

Packaging :

Tape and Reel (TR)