BSS169H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

68pF @ 25V

Factory Lead Time :

10 Weeks

JESD-609 Code :

e3

Mount :

Surface Mount

Number of Terminations :

3

Power Dissipation-Max :

360mW Ta

Series :

SIPMOS®

Terminal Position :

Dual

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

2.8nC @ 7V

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Contact Plating :

Tin

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Length :

2.9mm

Feedback Cap-Max (Crss) :

7 pF

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Continuous Drain Current (ID) :

170mA

Height :

1mm

Turn On Delay Time :

2.9 ns

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Radiation Hardening :

No

FET Feature :

Depletion Mode

Turn-Off Delay Time :

11 ns

Vgs(th) (Max) @ Id :

1.8V @ 50µA

Drain-source On Resistance-Max :

6Ohm

Published :

2011

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Width :

1.3mm

Max Dual Supply Voltage :

100V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Power Dissipation :

360mW

Rise Time :

2.7ns

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V