BSS138NH6433XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Series :

SIPMOS™

Factory Lead Time :

10 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Terminal Form :

Gull wing

Element Configuration :

Single

Height :

1mm

Drain to Source Voltage (Vdss) :

60V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

41pF @ 25V

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

Contact Plating :

Tin

Width :

1.3mm

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 10V

Number of Elements :

1

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

60V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2009

Vgs(th) (Max) @ Id :

1.4V @ 26μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

6.7 ns

Continuous Drain Current (ID) :

230mA

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 230mA, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

HTS Code :

8541.21.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Power Dissipation-Max :

360mW Ta

Turn On Delay Time :

2.3 ns

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Rise Time :

3ns

Length :

2.9mm