BSS131E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

3.1nC @ 10V

Continuous Drain Current (ID) :

110mA

Number of Terminations :

3

Terminal Form :

Gull wing

RoHS Status :

RoHS Compliant

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation :

360mW

Current - Continuous Drain (Id) @ 25°C :

110mA Ta

Rise Time :

8ns

Series :

SIPMOS®

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Voltage - Rated DC :

240V

Voltage :

240V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

Unknown

Package / Case :

TO-236-3, SC-59, SOT-23-3

Rds On (Max) @ Id, Vgs :

14 Ω @ 100mA, 10V

Feedback Cap-Max (Crss) :

5 pF

Drain-source On Resistance-Max :

26Ohm

Published :

1999

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.8V @ 56μA

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Terminal Finish :

MATTE TIN

Qualification Status :

Not Qualified

Terminal Position :

Dual

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

77pF @ 25V

Current Rating :

100mA

Power Dissipation-Max :

360mW Ta

Transistor Element Material :

SILICON

Current :

1A