BSS127 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

28pF @ 25V

Drain Current-Max (Abs) (ID) :

0.021A

HTS Code :

8541.21.00.95

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G3

DS Breakdown Voltage-Min :

600V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

500 Ω @ 16mA, 10V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

500mW Ta

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

21mA Ta

Vgs(th) (Max) @ Id :

2.6V @ 8μA

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 10V

Feedback Cap-Max (Crss) :

1.5 pF

FET Type :

N-Channel

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

600V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Drain-source On Resistance-Max :

600Ohm

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Series :

SIPMOS®

Reach Compliance Code :

Compliant

RoHS Status :

RoHS Compliant

Published :

2007