BSS126 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

600V

Pin Count :

3

Packaging :

Tape and Reel (TR)

Series :

SIPMOS®

Mounting Type :

Surface Mount

HTS Code :

8541.21.00.95

JESD-30 Code :

R-PDSO-G3

Reach Compliance Code :

Compliant

Published :

2007

Surface Mount :

yes

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

28pF @ 25V

Rds On (Max) @ Id, Vgs :

500 Ω @ 16mA, 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

FET Feature :

Depletion Mode

ECCN Code :

EAR99

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

600V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Power Dissipation-Max :

500mW Ta

Drain Current-Max (Abs) (ID) :

0.021A

Vgs(th) (Max) @ Id :

1.6V @ 8μA

Number of Terminations :

3

Terminal Position :

Dual

Number of Elements :

1

Feedback Cap-Max (Crss) :

1.5 pF

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

21mA Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel